MS1076 microsemi reserves the right to c hange, without notice, the specificati ons and information contained herein. visit our web site at www.microsemi.com or contact our factory direct. description: the MS1076 is a 28 volt epitaxial npn silicon planar transistor designed primarily for ssb and vhf communications. this device utilizes an emitter ballasted die geometry for maximum ruggedness and reliability. absolute maximum ratings (tcase = 25 c) symbol parameter value unit v cbo collector - base voltage 70 v v ceo collector - emitter voltage 35 v v ebo emitter - base voltage 4.0 v i c device current 16 a p diss power dissipation 250 w t j junction temperature +200 c t stg storage temperature - 65 to +150 c thermal data r th(j-c) junction - case thermal resistance 0.7 c/w rev a: october 2009 features ? 30 mhz ? 28 volts ? gold metallization ? p out = 220 w pep ? g p = 12 db gain minimum ? common emitter configuration rf & microwave transistors hf ssb applications
MS1076 microsemi reserves the right to c hange, without notice, the specificati ons and information contained herein. visit our web site at www.microsemi.com or contact our factory direct. electrical specifications (tcase = 25 c) static s y mbol test conditions v alue min. t yp . max. unit bv ces i c = 100 ma 70 --- --- v bv ceo i c = 200 ma 35 --- --- v bv ebo i e = 20 ma 4.0 --- --- v i ceo v ce = 30 v --- --- 5 ma i ces v ce = 35 v --- --- 5 ma h fe v ce = 5 v, i c = 7 a 15 --- 60 --- dynamic s y mbol test conditions v alue min. t yp . max. unit p out f = 30 mhz v ce = 28 v i cq = 750 ma 220 --- --- wpep g p f = 30 mhz v ce = 28 v i cq = 750 ma 12 --- --- db c f = 30 mhz v ce = 28 v i cq = 750 ma 40 --- --- % imd f = 30 mhz v ce = 28 v i cq = 750 ma --- --- -30 dbc c ob f = 1 mhz v cb = 28 v --- 450 --- pf conditions f1 = 30.000 mhz f2 = 30.001 mhz hfe binning (marked on lid with appropriate letter) : a = 15-19 d = 27-32 g = 45-50 b = 19-22.5 e = 32-38 h = 50-55 c = 22.5-27 f = 38-45 i = 55-60 impedance data freq z in z cl 30 mhz 1.2 + j0.41 1.25 + j1.92
MS1076 microsemi reserves the right to c hange, without notice, the specificati ons and information contained herein. visit our web site at www.microsemi.com or contact our factory direct. typical performance pout vs pin 0 25 50 75 100 125 150 175 200 225 250 275 012345678910111213141516 pin(w) pout(w) gain vs pout 11.00 11.50 12.00 12.50 13.00 13.50 14.00 14.50 15.00 15.50 0 20 40 60 80 100 120 140 160 180 200 220 240 260 pout(w ) gain(db)
MS1076 microsemi reserves the right to c hange, without notice, the specificati ons and information contained herein. visit our web site at www.microsemi.com or contact our factory direct. test circuit
MS1076 microsemi reserves the right to c hange, without notice, the specificati ons and information contained herein. visit our web site at www.microsemi.com or contact our factory direct. bias circuit
MS1076 microsemi reserves the right to c hange, without notice, the specificati ons and information contained herein. visit our web site at www.microsemi.com or contact our factory direct. package mechanical data
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